Effects of Ag doping and annealing on the charge-discharge characteristics of Al_0.6Si_0.4 thin film anode

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• 作者：Chao-Han Wu ; Fei-Yi Hung ; Truan-Sheng Lui ; Li-Hui Chen
• 关键词：Al ; Si ; Ag ; Anode ; Annealing
• 刊名：Thin Solid Films
• 出版年：2013
• 出版时间：1 October, 2013
• 年：2013
• 卷：544
• 期：Complete
• 页码：28-32
• 全文大小：535 K

文摘

Al and Si-based intermetallic alloys are considered as attractive anode materials for lithium ion batteries due to their ultra-high theoretical capacities. In this study, we adopted radio frequency magnetron sputtering to deposit a 400-nm-Al_0.6Si_0.4/40-nm-Al bilayer thin film anode. The effects of Ag doping and vacuum annealing on the charge-discharge characteristics of the prepared binary and ternary alloys were analyzed. It was observed that Ag doping significantly improved the electrical conductivity. The resistivities of the as-deposited and annealed samples were determined using a four-point probe method. The relationship between cycling performances and the electrochemical characteristics of the Al_{1 ? x ? y}Si_xAg_y thin film anodes was investigated via cyclic voltammetry and alternating-current electrochemical impedance spectroscopy.