Light emission enhancement from ZnO nanostructured films grown on Gr/SiC substrates

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• 作者：V. Khranovskyy^a ; ^{volkh@ifm.liu.se" class="auth_mail" title="E-mail the corresponding author} ; I. Shtepliuk^a ; I.G. Ivanov^a ; I. Tsiaoussis^b ; R. Yakimova^a
• 刊名：Carbon
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：99
• 期：Complete
• 页码：295-301
• 全文大小：1702 K

文摘

We report on the application of a single layer graphene substrates for the growth of polycrystalline ZnO films with advanced light emission properties. Unusually high ultraviolet (UV) and visible (VIS) photoluminesce was observed from the ZnO/Gr/SiC structures in comparison to identical samples without graphene. The photoluminescence intensity depends non-monotonically on the films thickness, reaching its maximum for 150 nm thick films. The phenomena observed is explained as due to the dual graphene role: i) the dangling bond free substrate, providing growth of relaxed thin ZnO layers ii) a back reflector active mirror of the Fabry-Perot cavity that is formed. The reported results demonstrate the potential of two-dimensional carbon materials integration with light emitting wide band gap semiconductors and can be of practical importance for the design of future optoelectronic devices.