Characterizations and thermal stability improvement of phase-change memory device containing Ce-doped GeSbTe films

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• 作者：Yu-Jen Huang ; Min-Chuan Tsai ; Chiung-Hsin Wang ; Tsung-Eong Hsieh ; ^{tehsieh@mail.nctu.edu.tw}
• 关键词：Phase-change memory ; Germanium antimony telluride ; Cerium ; Doping ; Electrical properties
• 刊名：Thin Solid Films
• 出版年：2012
• 出版时间：29 February 2012
• 年：2012
• 卷：520
• 期：9
• 页码：3692-3696
• 全文大小：795 K

文摘

Phase-transition temperature of GeSbTe (GST) chalcogenide film was drastically increased from 159 to 236 ¡ãC by cerium (Ce) doping (up to 8.6 at. % ) without altering the resistivity property of GST. Grain refinement via the solid-solution mechanism and the amplification of p-type semiconducting behavior in Ce-doped GST were observed. They were correlated with the enhancement of thermal stability and data retention property of GST as revealed by exothermal and isothermal analyses. Phase-change memory (PCM) device characterized at various temperatures revealed an effective thermal stability improvement on the threshold voltage of PCM device by Ce doping.