Nonvolatile floating gate memory characteristics of Sb₂Te-SiO₂ nanocomposite thin films

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• 作者：Cheng-Hsun Yang ; Kuo-Chang Chiang ; Tsung-Eong Hsieh ; ^{tehsieh@mail.nctu.edu.tw}
• 关键词：Chalcogenides ; Sb2Te ; Nanocomposite ; Nonvolatile floating gate memory
• 刊名：Thin Solid Films
• 出版年：2013
• 出版时间：1 February, 2013
• 年：2013
• 卷：529
• 期：Complete
• 页码：263-268
• 全文大小：1K

文摘

Nonvolatile floating gate memory (NFGM) device composed of Sb₂Te nanocrystals (NCs) as the charge-storage traps embedded in SiO₂ matrix was prepared by the target-attachment sputtering method at various nitrogen (N₂) incorporation conditions. Via post annealing at 450 ¡ãC in ambient air, the sample prepared at the condition N₂/Ar = 0.1 exhibited a maximum memory window (¦¤V_FB) shift = 4.4 V and charge density = 4.2 ¡Á 10¹² cm^? 2 under ¡À 7 V gate voltage sweep. N₂ incorporation not only reduced the Sb₂Te NC size to about 5 nm, but also suppressed the oxygen defects and antimony oxides in the sample. Feasibility of the Sb₂Te chalcogenide NCs to NFGM fabrication with the simplified process and relatively low annealing temperature is demonstrated.