Preparation of IGZO sputtering target and its applications to thin-film transistor devices

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• 作者：Chun-Chieh Lo ; Tsung-Eong Hsieh ; ^{tehsieh@mail.nctu.edu.tw}
• 关键词：IGZO ; Thin-film transistor ; Interfacial traps density
• 刊名：Ceramics International
• 出版年：2012
• 出版时间：July, 2012
• 年：2012
• 卷：38
• 期：5
• 页码：3977-3983
• 全文大小：1231 K

文摘

Nano-scale In₂O₃, Ga₂O₃ and ZnO powder mixture prepared by a hybrid process of chemical dispersion and mechanical grinding was adopted for the In-Ga-Zn-O (IGZO) sputtering target fabrication. A pressure-less sintering at 1300 ¡ãC for 6 h yielded the target containing sole InGaZnO₄ phase with relative density as high as 93 % . Consequently, the thin-film transistor (TFT) devices containing amorphous IGZO channels were prepared by using the self-prepared target and the electrical measurements indicated the TFT subjected to a post annealing at 300 ¡ãC exhibits the best device performance with the saturation mobility = 14.7 cm²/V s, threshold voltage = 0.57 V, subthreshold gate swing = 0.45 V/decade and on/off ratio = 10⁸. Capacitance-voltage measurement indicated that post annealing effectively suppresses the interfacial traps density at the IGZO/SiO₂ interface and thus enhances the electrical performance of TFT.