P-I-N amorphous silicon for thin-film light-addressable potentiometric sensors
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- 作者：Chia-Ming Yanga ; b ; c ; d ; cmyang@mail.cgu.edu.tw" class="auth_mail" title="E-mail the corresponding authorAuthor Vitae ; Yuan-Hui LiaoaAuthor Vitae ; Chun-Hui ChenaAuthor Vitae ; Tsung-Cheng ChenbAuthor Vitae ; Chao-Sung Laib ; c ; e ; f ; cslai@mail.cgu.edu.tw" class="auth_mail" title="E-mail the corresponding authorAuthor Vitae ; Dorota G. Pijanowskag
- 关键词：a-Si ; LAPS ; PIN ; pH ; Photovoltage ; Spatial resolution
- 刊名：Sensors & Actuators: B. Chemical
- 出版年：2016
- 出版时间：29 November 2016
- 年：2016
- 卷：236
- 期：Complete
- 页码：1005-1010
- 全文大小：1526 K
文摘
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P-I-N stacked a-Si layers structure on glass is firstly applied in LAPS.
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Photovoltage of P-I-N a-Si LAPS is much higher than conventional a-Si LAPS.
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pH sensitivity is 40 mV/pH for NbOx layer on P-I-N a-Si LAPS.
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Signal-to-noise ratio can be improved in high ac frequency modulation of red laser illumination by P-I-N a-Si LAPS, which is benefit for high-speed chemical image.