Engineering performance of barristors by varying the thickness of WS₂

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• 作者：Doo-Hua Choi^a ; Jun-Ho Lee^a ; Hyun-Cheol Kim^a ; Han-Byeol Lee^a ; Nae Bong Jeoung^a ; Do-Hyun Park^a ; Hakseong Kim^b ; Sung Ho Jhang^a ; Sang-Wook Lee^c ; Hyun-Jong Chung^a ; ^{hjchung@konkuk.ac.kr}
• 关键词：Graphene ; Tungsten disulfide ; Barristor ; Scaling law
• 刊名：Current Applied Physics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：17
• 期：1
• 页码：11-14
• 全文大小：852 K
• 卷排序：17

文摘

We have investigated the performances of barristors with a graphene-tungsten disulfide (WS2) junction by varying the thickness of WS2 and gate oxide. On-current density (JON) and on- and off-current ratio (JON/JOFF) increases, and sub-threshold swing (VSS) decreases with the WS2 thickness. Also, barristors with thicker WS2 required less workfunction shift, to switch the barristors. Therefore, unlike the traditional devices, VSS of barristor with gate dielectric 300 nm was smaller than that of 90 nm, when the former is fabricated with thicker WS2 than the latter. Since materials properties of 2-dimensional semiconductors generally vary with their thickness, the thickness of 2D semiconductors could become a key parameter to engineer the performance of barristors with graphene and the 2D semiconductors.