Modelling of single-crystal diamond Schottky diodes for high-voltage applications
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- 作者：S.J. Rashid ; A. Tajani ; L. Coulbeck ; M. Brezeanu ; A. Garraway ; T. Butler ; N.L. Rupesinghe ; D.J. Twitchen ; G.A.J. Amaratunga ; F. Udrea et al.
- 关键词：Diamond ; Schottky diodes ; Modelling
- 刊名：Diamond and Related Materials
- 出版年：2006
- 出版时间：February-March 2006
- 年：2006
- 卷：15
- 期：2-3
- 页码：317-323
- 全文大小：487 K
文摘
The modelling of Schottky m-i-p+ (SMIP) diodes fabricated on chemical vapour deposited (CVD) single crystal (SC) diamond intrinsic layers grown on highly boron doped CVD diamond substrates is reported. Variations in intrinsic layer thickness, Schottky metal type and operating temperature have been included in the analysis. Numerical models that take into account the activation of dopants, concentration and temperature dependant mobility and avalanche coefficients have been derived to successfully simulate experimental diamond devices.