Characterization of high-quality polycrystalline diamond and its high FET performance

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• 作者：K. Ueda ; M. Kasu ; Y. Yamauchi ; T. Makimoto ; M. Schwitters ; D.J. Twitchen ; G.A. Scarsbrook ; S.E. Coe
• 关键词：Polycrystalline diamond ; FET ; RF performance ; Hydrogen-terminated
• 刊名：Diamond and Related Materials
• 出版年：2006
• 出版时间：November-December 2006
• 年：2006
• 卷：15
• 期：11-12
• 页码：1954-1957
• 全文大小：518 K

文摘

We characterized high-quality polycrystalline diamond with large grains and fabricated polycrystalline diamond field effect transistors (FETs). The polycrystalline diamond had (110) preferred orientation, and its typical grain size was 100 μm. Well-resolved free exciton related emissions were observed at room temperature in cathodoluminescence. The FETs showed extremely high DC and RF performance. The cut-off frequency for current gain (f_T) and power gain (f_max) were 45 and 120 GHz, respectively. The maximum drain current (I_DS) was 550 mA/mm. These values are the highest among diamond FETs, including those fabricated from single-crystal diamond. These results suggest that high-quality polycrystalline diamond, whose maximum size is 4 in., is very promising for diamond electronic devices.