X-ray topography studies of dislocations in single crystal CVD diamond

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• 作者：M.P. Gaukroger ; P.M. Martineau ; M.J. Crowder ; I. Friel ; S.D. Williams ; D.J. Twitchen
• 关键词：Defect characterization ; Single crystal growth ; Homoepitaxy
• 刊名：Diamond and Related Materials
• 出版年：2008
• 出版时间：March 2008
• 年：2008
• 卷：17
• 期：3
• 页码：262-269
• 全文大小：1031 K

文摘

X-ray topography has been used to study single crystal diamond samples homoepitaxially grown by microwave plasma-assisted chemical vapour deposition (CVD) on high pressure high temperature (HPHT) and CVD synthetic diamond substrates. Clusters of dislocations in the CVD diamond layers emanated from points at or near the interface with the substrate. The Burgers vectors of observed dislocations have been determined from sets of {111} projection topographs. Dislocations have line directions close to the [001] growth direction and are either edge or 45° mixed dislocations. Where groups of dislocations originated at isolated points they tended to be of the edge variety. Where the substrate surface was deliberately damaged before growth, two sets of dislocations were observed to have propagated from each line of damage and there was a tendency for dislocations to be of the 45° mixed variety with a component of their Burgers vector parallel to the polishing direction. It is demonstrated that X-ray topography can be used to deduce the growth history of CVD synthetic diamond samples produced in multiple growth stages.