Surface reconstructions of MnAs grown on GaAs(001)
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- 作者：Kä ; stner ; M. ; Schippan ; F. ; Schü ; tzendü ; be ; P. ; Dä ; weritz ; L. ; Ploog ; K.H.
- 关键词：Epitaxy ; Gallium arsenide ; Magnetic films ; Manganese arsenide ; Metal&ndash ; semiconductor magnetic heterostructures ; Reflection spectroscopy ; Scanning tunneling microscopy ; Surface relaxation and reconstruction
- 刊名：Surface Science
- 出版年：2000
- 出版时间：July 20, 2000
- 年：2000
- 卷：460
- 期：1-3
- 页码：144-152
- 全文大小：550 K
文摘
During epitaxial growth of MnAs on GaAs(001) by molecular-beam epitaxy (MBE) the surface exhibits various reconstructions depending on the growth conditions. These reconstructions have been studied during growth by reflection high-energy electron diffraction (RHEED) and reflectance difference spectroscopy (RDS). A feature sensitive to the surface structure was identified in the RD spectra. After growth, the (1×2) and (1×1) reconstructions were cooled down to room temperature and imaged in ultrahigh vacuum with a conventional scanning tunneling microscope (STM). Atomic-scale images of these surfaces are presented.