Evolution of short- and long-range order during Si incorporation on GaAs(0 0 1) observed by RAS and RHEED during MBE
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- 作者：Dä ; weritz ; L. ; Schü ; tzendü ; be ; P. ; Ploog ; K.H. ; Stahrenberg ; K. ; Zettler ; J.-T. ; et. al.
- 关键词：Molecular beam epitaxy ; Gallium arsenide ; Si-doping ; Si-on-GaAs ; Kinetics of interface formation ; Surface reconstruction ; Reflectance anisotropy spectroscopy ; Reflection high-energy electron diffraction
- 刊名：Journal of Crystal Growth
- 出版年：1997
- 出版时间：May, 1997
- 年：1997
- 卷：175-176
- 期：Index 1
- 页码：310-316
- 全文大小：572 K
文摘
The Si incorporation on GaAs (0 0 1) has been studied in real time by reflection high-energy electron diffraction (RHEED) and reflectance anisotropy spectroscopy (RAS) at conditions of enhanced adatom mobility. In the RAS spectra, besides resonances due to As and Ga dimers on the GaAs surface also features due to Si dimers in single and double layers as well as As dimers adsorbed on them are identified. The incorporation process is very complex due to Si-induced As desorption, combined incorporation of Si and As, and readsorption of As on (Si, Ga). At conditions of high adatom mobility (low AS4 pressure) a single Si layer is nearly completed before Si incorporation in a second layer takes place, whereas for reduced adatom mobility (high AS4 pressure) islanding with Si incorporation in a double layer is found in early growth stages.