Investigation of thickness dependence on electronic structures of iron and nickel thin films by L-edge X-ray absorption spectroscopy

详细信息    查看全文

• 作者：Guvenc Akgul ; Funda Aksoy Akgul ; Yuksel Ufuktepe
• 关键词：Metals ; Thin films ; XANES ; Electronic structure
• 刊名：Vacuum
• 出版年：2014
• 出版时间：January, 2014
• 年：2014
• 卷：99
• 期：Complete
• 页码：211-215
• 全文大小：1157 K

文摘

We have studied the effect of the film thickness on the electronic structure of pure nickel and iron thin films. Series of the thin films were evaporated by e-beam evaporation on SiN substrates. The electronic structure of the thin films was investigated using X-ray absorption near edge structure (XANES) spectroscopy. We have showed the thickness dependent variation of the experimental branching ratio (BR) and full-width at half-maximum (FWHM) at the L₃ and L₂ edges for both thin films. A strong thickness dependence of the L_2,3 BR and FWHM was found. We have also focused on the deviation of L₃ to L₂ ratio from its statistical value. The average L₃/L₂ white-line intensity ratio was calculated to be 3.4 and 3.0 from peak height and integrated area under each L₃ and L₂ peaks, respectively for iron. Additionally, a theoretical L_2,3 edge calculation for nickel was presented. The obtained results were consistent with the general view of the L_2,3 BR and FWHM of iron and nickel transition metals.