A novel method for growing polycrystalline Ge layer by using UHVCVD

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• 作者：Chun-Hao Tu ; Ting-Chang Chang ; Po-Tsun Liu ; Tsung-Hsi Yang ; Hsiao-Wen Zan and Chun-Yen Chang
• 关键词：UHVCVD ; Polycrystalline ; Germanium
• 刊名：Surface and Coatings Technology
• 出版年：2006
• 出版时间：24 February 2006
• 年：2006
• 卷：200
• 期：10
• 页码：3261-3264
• 全文大小：266 K

文摘

Poly-Ge grown on SiO₂ substrates by using one-step ultra-high vacuum chemical vapor deposition (UHVCVD) process with thin Si nucleation layers at very low deposition temperature (350 °C) was demonstrated. The results demonstrated that the polycrystalline silicon (poly-Si) nucleation layer is needed for the growth of polycrystalline germanium (poly-Ge) on SiO₂ substrates at low growth temperature. SEM image presents the films with uniform grain size and uniform thickness occurring in the samples. The grain size of poly-Ge is about 100 nm. The Raman shift spectrum and XRD spectrum also identified that films are high quality poly-Ge by using this method.