A SiGe/Si multiple quantum well avalanche photodetector

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• 作者：Po-Hsing Sun ; Shu-Tong Chang ; Yu-Chun Chen ; Hongchin Lin
• 关键词：Avalanche photodiodes (APDs) ; Photoluminescence (PL) ; SiGe ; UHV/CVD ; Multi-quantum well (MQW)
• 刊名：Solid-State Electronics
• 出版年：2010
• 出版时间：October 2010
• 年：2010
• 卷：54
• 期：10
• 页码：1216-1220
• 全文大小：660 K

文摘

The present work investigates the performance of APDs with a SiGe/Si multi-quantum well (MQW) structure, which was fabricated using ultrahigh-vacuum chemical vapor deposition (UHV/CVD). Absorption of radiation and avalanche multiplication occur in both SiGe/Si MQW and the i-SiGe layer. Intense photoluminescence (PL) from strained, epitaxial SiGe alloys grown using UHV/CVD was reported with multiple SiGe/Si MQW and i-SiGe layer. It was found that the avalanche multiplication occurred at about 7 V, when exceeding 7 V, the responsiveness and quantum efficiency rapidly increased. An APD consisting of an epitaxial SiGe/Si MQW as the active absorption layer with intense response in the 800–1500 nm wavelength range is also demonstrated.