The effects of low temperature buffer layer on the growth of pure Ge on Si(001)

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• 作者：Keun Wook Shin ; Hyun-Woo Kim ; Jungsub Kim ; Changjae Yang ; Sangsoo Lee ; Euijoon Yoon
• 关键词：Germanium ; UHVCVD ; Two step growth ; Thickness ; Low temperature
• 刊名：Thin Solid Films
• 出版年：2010
• 出版时间：1 September 2010
• 年：2010
• 卷：518
• 期：22
• 页码：6496-6499
• 全文大小：946 K

文摘

We investigated the effects of low temperature (LT) Ge buffer layers on the two-step Ge growth by varying the thickness of buffer layers. Whereas the two-step Ge layers using thin (< 40 nm) Ge buffer layers were roughened due to the formation of SiGe alloy, pure and flat Ge layers were grown by using thick (> 50 nm) LT Ge buffer layers. The lowest threading dislocation density of 1.2 × 10⁶ cm⁻² was obtained when 80-nm-thick LT Ge buffer layer was used. We concluded that the minimum thickness of buffer layer was required to grow uniform two-step Ge layers on Si and its quality was subject to the thickness of buffer layer.