Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD-MBE growth cluster
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- 作者：T. Quinci ; J. Kuyyalil ; T. Nguyen Thanh ; Y. Ping Wang ; S. Almosni ; A. L¨¦toublon ; T. Rohel ; K. Tavernier ; N. Chevalier ; O. Dehaese ; N. Boudet ; J.F. B¨¦rar ; S. Loualiche ; J. Even ; N. Bertru ; A. Le Corre ; O. Dur ; C. Cornet
- 关键词：A1. Crystal structure ; A1. Planar defects ; A1. X-ray diffraction ; A3. Chemical vapor deposition processes ; A3. Molecular beam epitaxy ; B2. Semiconducting III&ndash ; V materials ; B2. Semiconducting silicon
- 刊名：Journal of Crystal Growth
- 出版年：2013
- 出版时间：1 October, 2013
- 年：2013
- 卷：380
- 期：Complete
- 页码：157-162
- 全文大小：3393 K
文摘
We report on the association of Ultra High Vaccum Chemical Vapor Deposition (UHVCVD) and Molecular Beam Epitaxy (MBE) to achieve III-V (GaP) integration on Si/Si(100) substrates. We first demonstrate that a very good flatness (0.3 nm) can be obtained when growing directly GaP on a chemically prepared Si substrate. X-ray diffraction pole figure however demonstrates that a residual amount of micro-twins originating from the hetero-interface still remains. Silicon homoepitaxial buffer layer is then optimized in the UHVCVD chamber on different Si substrates misorientation (+/-0.15-6¡ã-off) . A flat, clean and bistepped Si surface is achieved during the homoepitaxial growth on 6¡ã-off silicon substrates. Samples are then transferred under UHV conditions to the MBE chamber to perform GaP overgrowth. Keeping the same III-V overgrowth conditions, influence of silicon homoepitaxial buffer layer on micro-twins generation is determined quantitatively using Synchrotron X-Ray Diffraction. We finally demonstrate that growing a flat, clean and bistepped silicon buffer layer on a 6¡ã-off substrate, and transferring it under UHV to the MBE chamber for GaP overgrowth reduces significantly the amount of anisotropic defects generated in the GaP epilayers.