Effects of Linker Length and Transient Secondary Structure Elements in the Intrinsically Disordered Notch RAM Region on Notch Signaling
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- 作者：Kathryn P. Sherry ; Scott E. Johnson ; Christine L. Hatem ; Ananya Majumdar ; Doug Barrick ; barrick@jhu.edu" class="auth_mail" title="E-mail the corresponding author
- 关键词：RAM ; RBP-j-associated molecule ; NICD ; Notch intracellular domain ; CSL ; CBF-1/RBP-j ; Su(H) ; Lag-1 ; WLC ; worm-like chain ; ANK ; ankyrin ; BTD ; 尾-trefoil domain ; IDP ; intrinsically disordered protein ; SV-AUC ; sedimentation velocity analytical ultracentrifugation ; NLS ; nuclear localization sequences ; IDP ; intrinsically disordered protein ; SV-AUC ; sedimentation velocity analytical ultracentrifugation ; NLS ; nuclear localization sequences ; AUC ; analytical ultracentrifugation ; HSQC ; heteronuclear single q
- 刊名：Journal of Molecular Biology
- 出版年：2015
- 出版时间：6 November 2015
- 年：2015
- 卷：427
- 期：22
- 页码：3587-3597
- 全文大小：986 K
文摘
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The disordered RAM region of NICD interacts with CSL during Notch activation.
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RAM linker length variation shows features consistent with chain statistics.
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Additional sequence elements in RAM have specific effects on Notch activation.
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RAM transient secondary structure has modest effects on Notch activation.
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Intrinsically disordered protein structural elements distant from interaction sites can affect intrinsically disordered protein function