Highly spectrum-selective near-band-edge ultraviolet photodiode based on indium oxide with dipole-forbidden bandgap transition

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• 作者：Yanan Huang^a ; Yongfeng Li^a ; ^b ; ^{liyongfeng@jlu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Rui Deng^c ; Bin Yao^a ; ^b ; ^{binyao@jlu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Zhanhui Ding^a ; Ligong Zhang^d ; Haifeng Zhao^d ; Zhenzhong Zhang^d ; Lei Liu^d ; Yingrui Sui^e
• 关键词：Indium oxide ; Dipole-forbidden rule ; Photoluminescence ; Ultraviolet photodiode ; Photoresponse
• 刊名：Ceramics International
• 出版年：2016
• 出版时间：15 May 2016
• 年：2016
• 卷：42
• 期：7
• 页码：8017-8021
• 全文大小：2590 K

文摘

We reported a highly spectrum-selective ultraviolet photodiode based on In₂O₃ with dipole-forbidden bandgap transition. The near-band-edge ultraviolet emission and absorption were observed in the hybrid In₂O₃ films with the In₂O₃ nanocrystals embedded into the amorphous In₂O₃ matrix, indicating that the dipole-forbidden rule of bulk In₂O₃ is broken. The hybrid In₂O₃ film was deposited on the p-GaN/sapphire wafer to form an In₂O₃/p-GaN heterojunction photodiode. The photodiode showed an obvious rectifying behavior in a current–voltage measurement and a narrow-band ultraviolet photoresponse at the near-band-edge region under back-illumination conditions. Electronic structure calculations based on the first-principles method demonstrate that the breaking of dipole-forbidden transition rule is derived from the surface states of In₂O₃ nanocrystals. Our results suggest that tailoring the In₂O₃ nanocrystalline structure is an effective route to achieving novel optical properties and applying these properties to the ultraviolet optoelectronic field.