AlGaN surfaces etched by CF₄ plasma with and without the assistance of near-ultraviolet irradiation

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• 作者：Retsuo Kawakami^a ; ^{retsuo@ee.tokushima-u.ac.jp} ; Masahito Niibe^b ; Yoshitaka Nakano^c ; Takashi Mukai^d
• 关键词：Capacitively coupled CF4 plasma ; Near-ultraviolet irradiation ; AlGaN thin film ; Surface composition ; Surface morphology
• 刊名：Vacuum
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：136
• 期：Complete
• 页码：28-35
• 全文大小：2227 K
• 卷排序：136

文摘

We clarified the near-UV effect on CF4 plasma-etched Al0.24Ga0.76N surfaces. The UV effect reduced the amounts of F, AlFx, and GaFx incorporated in the surface. The UV effect enhanced the amount of CFx incorporated in the surface. The UV effect did not influence the degree of nitrogen-deficit caused in the surface. The UV effect changed the morphology of the surface etched at a high gas pressure.