Heteroepitaxy of InSb films grown on a Si(0 0 1) substrate with AlSb buffer layer

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• 作者：M. Mori ; N. Fujimoto ; N. Akae ; K. Uotani ; T. Tambo and C. Tatsuyama
• 关键词：A1. Atomic force microscopy ; A1. X-ray diffraction ; A3. Molecular beam epitaxy ; B2. Semiconducting materials
• 刊名：Journal of Crystal Growth
• 出版年：2006
• 出版时间：15 January 2006
• 年：2006
• 卷：286
• 期：2
• 页码：218-222
• 全文大小：309 K

文摘

The growth of InSb films on a Si(0 0 1) substrate with AlSb buffer layer was performed in an ultra high vacuum chamber (UHV) by a co-evaporation of elemental Indium (In) and antimony (Sb) sources. The samples were characterized by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and atomic force microscopy (AFM). The surface morphology and the crystal quality of the grown films strongly depend on the flux ratio of Sb/In. It is found that the optimized flux ratio for the one-step growth procedure is about 2.9 to obtain the InSb films with smooth surface and good crystal quality, for the growth temperature of 300 °C. The two-step growth procedure was also used to further improve the crystal quality of the films.