Thermal compensation technique using the parasitic diode for DMOS transistors

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• 作者：M.A. Carvajal^a ; ^{carvajal@ugr.es" class="auth_mail" title="E-mail the corresponding author} ; ^{migue0carvajal@gmail.com" class="auth_mail" title="E-mail the corresponding author}Author Vitae ; M.S. Martí ; nez-Garcí ; a^bAuthor Vitae ; D. Guirado^cAuthor Vitae ; A. Martí ; nez-Olmos^aAuthor Vitae ; A.J. Palma^aAuthor Vitae
• 关键词：Thermal compensation ; Parasitic diode ; DMOS dosimeter
• 刊名：Sensors and Actuators A: Physical
• 出版年：2016
• 出版时间：1 October 2016
• 年：2016
• 卷：249
• 期：Complete
• 页码：249-255
• 全文大小：1099 K

文摘

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d="par0005">Thermal compensation technique using the parasitic diode in MOSFET sensor: thus no additional device is required, only to reverse the drain current.

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d="par0010">The technique has been experimentally tested successfully it has been implemented in our reader unit and it has been applied to a commercial DMOS transistor (ZVP3306F).

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d="par0015">Thermal experiments have been carried out using the modified reader unit and the thermal dependence up to 42 times, in averaged.

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d="par0020">Dose measurements were carried out with electron beams, obtaining a sensitivity of (7.9 ± 0.1) mV/Gy.

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