Band offsets in sputtered Sc₂O₃/InGaZnO₄ heterojunctions

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• 作者：David C. Hays^a ; B.P. Gila^a ; S.J. Pearton^a ; ^{spear@mse.ufl.edu} ; Ryan Thorpe^b ; F. Ren^c
• 关键词：IGZO ; Band offset ; X-ray photoelectron spectroscopy
• 刊名：Vacuum
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：136
• 期：Complete
• 页码：137-141
• 全文大小：997 K
• 卷排序：136

文摘

We measured the band offsets of Sc2O3 on InGaZnO4, a promising transparent conducting oxide for flexible electronics. The band alignment is straddling (type II), with a valence band offset of −1.33 eV. The results may be beneficial to transparent thin film transistor devices in which surface passivation is critical.