Impact of wavelength of UV light and UV cure time on chemical and mechanical properties of PECVD deposited porous ultra low-k films

详细信息    查看全文

• 作者：S. Godavarthi^a ; ^b ; Q.T. Le^a ; P. Verdonck^a ; ^{verdonck@imec.be} ; S. Mardani^a ; K. Vanstreels^a ; E. Van Besien^a ; M.R. Baklanov^a
• 关键词：Ultra low-k ; PECVD ; FTIR ; Nanoindentation ; Porogen ; UV cure
• 刊名：Microelectronic Engineering
• 出版年：2013
• 出版时间：July, 2013
• 年：2013
• 卷：107
• 期：Complete
• 页码：134-137
• 全文大小：801 K

文摘

We report a method to improve the chemical stability and the mechanical properties of a plasma enhanced chemical vapour deposited ultra low-dielectric constant material. This enhancement in the properties was achieved through extended UV cure times using a broad band lamp, emitting light at wavelengths higher than 200 nm. These longer cures also increased significantly the Young¡¯s modulus, but the dielectric constant did increase less than the experimental error. It is also demonstrated that this improved property depends on the chemical bonds present in the film, such as Si-CH₃, as well as on the density of the film. Films with a dielectric constant of 2.06, Young¡¯s modulus of 4.9 GPa and perfect resistance against 0.5 % HF for up to 300 s, were obtained. Another type of UV cure, using a narrow band lamp with wavelength of 172 nm, induced completely different chemical resistance characteristics of the resulting films.