Low-k a-SiCO:H films as diffusion barriers for advanced interconnects
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- 作者：Els Van Besien ; els.vanbesien@imec.be" class="auth_mail ; Arjun Singh ; Yohan Barbarin ; Patrick Verdonck ; Harold F.W. Dekkers ; Kris Vanstreels ; Jean-Franç ; ois de Marneffe ; Mikhail R. Baklanov ; Sven Van Elshocht
- 关键词：SiCO ; Low-k ; Copper barrier ; TDDB ; Moisture barrier ; Copper interconnects
- 刊名：Microelectronic Engineering
- 出版年：25 May, 2014
- 年：2014
- 卷：120
- 期：Complete
- 页码：221-224
- 全文大小：476 K
文摘
Scaling of the copper interconnect structures requires dielectric barrier materials with a gradually lower dielectric constant that still have adequate copper and moisture barrier properties. In this work, we study the PE-CVD deposition of a-SiCO:H films using octamethyl cyclotetrasiloxane (OMCTS) as a precursor, targeting a dielectric constant of 3.5 or below. The effect of process parameters on film characteristics and chemical bonding structure was investigated. Copper and moisture barrier properties were studied for a selection of films. For an a-SiCO:H film with a dielectric constant as low as 3.4, the intrinsic TDDB lifetime at 1 MV/cm exceeds the 10 years specification, meaning that it is a copper barrier, at a thickness of 30 nm. A Young鈥檚 modulus of 14.8 卤 0.8 GPa was measured, and a hardness of 1.8 卤 0.1 GPa. The plasma etch selectivity to a commercial porous a-SiCO:H film with dielectric constant of 2.5 is 1:2.3. However, moisture barrier properties are doubtful, as was shown by 2 different evaluation methods based on spectroscopic ellipsometry.