Pronounced electrocatalytic oxidation enhancement at the surface of InGaN layers and nanostructures directly grown on Si by plasma-assisted molecular beam epitaxy is demonstrated.

In cyclic voltammetry measurement, the potential of the anodic current peak is given by the In content, i.e., the density of positively charged surface donors and the peak current is governed by the area of active c-plane.

InN QDs are designed active sites to strongly enhance the electrocataclytic behavior.

Optimum balance between catalytic activity driving the reaction and surface area increasing the amount is understood.