Strategy for preparation of transparent organic thin film transistors with PEDOT:PSS electrodes and a polymeric gate dielectric

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• 作者：G. Albrecht ; S. Heuser ; C. Keil ; D. Schlettwein ; ^{schlettwein@uni-giessen.de" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Organic field-effect transistor ; Dielectric layer ; Polymer ; Photolithography ; Transparent device ; Poly(3 ; 4-ethylenedioxythiophene) polystyrene sulfonate
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2015
• 出版时间：December 2015
• 年：2015
• 卷：40
• 期：Complete
• 页码：772-776
• 全文大小：2483 K

文摘

Fully transparent organic field effect transistors (OFET) in top- and bottom-gate layouts were prepared. Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) was structured photolithographically as either gate- or source- and drain-contact on top of poly(4-vinylphenol) (PVP). The dielectric material was fitted to the sequence of materials by combining water soluble polyvinyl alcohol (PVA) and PVP. N-type conducting hexadecafluorophthalocyaninato-copper (F₁₆PcCu) was used as organic semiconductor sensitive to interface traps. Critical boundary surfaces for film growth were examined by microscopic methods, which revealed smooth polymer surfaces as a result of our preparation and lithography steps characterizing the presented concept as a viable alternative to existing approaches.