Boosting thermoelectric performance of p-type SiGe alloys through in-situ metallic YSi2 nanoinclusions
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- 作者：Sajid Ahmada ; bAuthor Vitae ; Ajay Singha ; Author Vitae ; Anil BohraaAuthor Vitae ; Ranita BasuaAuthor Vitae ; Shovit BhattacharyaaAuthor Vitae ; Ranu BhattaAuthor Vitae ; K.N. MeshramaAuthor Vitae ; Mainak RoycAuthor Vitae ; Shaibal K. SarkardAuthor Vitae ; Y. HayakawaeAuthor Vitae ; A.K. DebnathaAuthor Vitae ; D.K. Aswala ; Author Vitae ; S.K. GuptaaAuthor Vitae
- 关键词：Thermoelectrics ; Thermal conductivity ; Nanoinclusions ; Coherent interfaces ; Tunneling ; Phonon scattering
- 刊名：Nano Energy
- 出版年：2016
- 出版时间：September 2016
- 年：2016
- 卷：27
- 期：Complete
- 页码：282-297
- 全文大小：4781 K
文摘
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Sintering of p-type SiGe with Y2O3 results in in-situ formation of YSi2 nano-inclusions.
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YSi2- SiGe coherent interface reduces thermal conductivity without affecting power factor.
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SiGe with YSi2 nano-inclusions exhibit figure-of-merit (ZT) of ~1.81 (at 1100 K).