Enhanced sensing response towards NO₂ based on ordered mesoporous Zr-doped In₂O₃ with low operating temperature

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• 作者：Qiuyue Yang^a ; ^bAuthor Vitae ; Yinglin Wang^a ; ^bAuthor Vitae ; Jie Liu^a ; ^bAuthor Vitae ; Jiangyang Liu^a ; ^bAuthor Vitae ; Yuan Gao^a ; ^b ; ^{gaoyuan@jlu.edu.cn}Author Vitae ; Peng Sun^a ; ^bAuthor Vitae ; Jie Zheng^bAuthor Vitae ; Tong Zhang^bAuthor Vitae ; Yue Wang^cAuthor Vitae ; Geyu Lu^a ; ^b ; ^{lugy@jlu.edu.cn}Author Vitae
• 关键词：Semiconductor oxides ; Mesoporous In2O3 ; Zr-doping ; Gas sensor ; NO2
• 刊名：Sensors and Actuators B: Chemical
• 出版年：2017
• 出版时间：31 March 2017
• 年：2017
• 卷：241
• 期：Complete
• 页码：806-813
• 全文大小：2829 K
• 卷排序：241

文摘

As we know, there has rarely been research about the gas sensing properties of Zr-doped In2O3. In this work, we synthesized and characterized Zr-doped In2O3 with a hard template method and investigated the gas sensing properties of the sensor based on Zr-doped In2O3. Zr-doping makes the operating resistance rather low (23 kΩ). Besides, the operating temperature is very low (75 °C), too. It means this material has the potential in the field of portable device due to its low energy cost. The detection limit is down to 20 ppb of NO2.