Ion channeling in CuInSe₂ single crystals

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• 作者：Michael V. Yakushev ; ^{michael.yakushev@strath.ac.uk} ; Vladimir A. Volkov ; Ilya I. Ogorodnikov ; Vladimir U. Ivanov
• 关键词：CuInSe2 ; Ion channeling ; Defects
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2013
• 出版时间：15 March, 2013
• 年：2013
• 卷：299
• 期：Complete
• 页码：24-28
• 全文大小：508 K

文摘

CuInSe₂ single crystals are studied by the Rutherford Backscattering of 2 MeV helium ions involving axial channeling along the ¡´2 2 1¡µ direction of the chalcopyrite lattice. Experimental values of the critical angle and normalized minimum yield are measured and compared with theory. The concentration of point defects separately in the Cu, In, and Se sublattices, determined from the comparison of experimental and theoretical minimum yields, are estimated as 4.7 ¡Á 10²⁰, 1.0 ¡Á 10²⁰, and 5.7 ¡Á 10²⁰ cm^?3, respectively.