A study of Ga layers on Si(1 0 0)-(2 × 1) by SR-PES: Influence of adsorbed water

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• 作者：Jan Č ; echal ; Jindř ; ich Mach ; Stanislav Voborný ; Petr Kostelní ; k ; Petr Bá ; bor ; Jiř ; í ; Spousta ; Tomá ; &#x161 ; &#x160 ; ikola
• 关键词：Gallium ; Ga ; Silicon ; Si(1 0 0) ; Water ; Surface structure ; Low energy electron diffraction (LEED) ; Synchrotron radiation photoelectron spectroscopy
• 刊名：Surface Science
• 出版年：2007
• 出版时间：1 May 2007
• 年：2007
• 卷：601
• 期：9
• 页码：2047-2053
• 全文大小：702 K

文摘

Results for deposition and thermal annealing of gallium on the Si(1 0 0)-(2 × 1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface, the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher temperature (490 °C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to 0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface structure similar to the Ga-(2 × 2), however, it is less ordered, probably due to the presence of silicon oxides formed from water fragments.