Bias enhanced nucleation of diamond thin films in a modified HFCVD reactor

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• 作者：T. Iž ; á ; k ; M. Marton ; M. Varga ; M. Vojs ; M. Veselý ; R. Redhammer ; M. Michalka
• 关键词：Diamond thin films ; Nucleation ; HFCVD ; SEM ; Raman Spectroscopy
• 刊名：Vacuum
• 出版年：2009
• 出版时间：25 August 2009
• 年：2009
• 卷：84
• 期：1
• 页码：49-52
• 全文大小：432 K

文摘

In this study we investigated the nucleation of synthetic diamond thin films on Si substrates by double bias enhanced Hot Filament Chemical Vapour Deposition (HFCVD) method. First, we investigated the influence of the bias voltage and secondly the influence of the nucleation time under different bias voltages. The bias voltage was varied from −120 V up to −220 V as well as the nucleation time was changed from 30 up to 120 min in order to obtain the optimized nucleation conditions for following growth of continuous diamond layer. Samples were analyzed by Scanning Electron Microscopy (SEM) and Raman Spectroscopy. SEM was used for determination of cluster sizes and their distribution on the Si surface, while Raman Spectroscopy for determination and analysis of carbon phases.