Electrical property dependence on thickness and morphology of nanocrystalline diamond thin films
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- 作者：T. Iž ; á ; k ; M. Vojs ; M. Veselý ; J. Š ; kriniarová ; I. Novotný ; M. Michalka ; R. Redhammer
- 关键词：Nanocrystalline diamond ; Electrical properties ; Scanning electron microscopy ; Raman spectroscopy
- 刊名：Microelectronics Journal
- 出版年：2009
- 出版时间：March 2009
- 年：2009
- 卷：40
- 期：3
- 页码：615-617
- 全文大小：475 K
文摘
In this study, we investigate the influence of nanocrystalline diamond (NCD) thin film morphology and thickness on their electrical properties. NCD films are grown on p-type Si substrates with varied thicknesses from 250 to 788 nm. Electrical contacts are formed from combination of Ti/Au metal layers (100 nm thick each). The I–V and breakdown field measurements are used to analyze the electrical properties of metal/NCD/Si sandwich structure. In addition, NCD films are analyzed by scanning electron microscopy and Raman spectroscopy for better interpretation of the I–V measurements.