M-plane GaN(1100) grown on γ-LiAlO₂(100): nitride semiconductors free of internal electrostatic fields

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• 作者：Waltereit ; P. ; Brandt ; O. ; Ramsteiner ; M. ; Trampert ; A. ; Grahn ; H.T. ; Menniger ; J. ; Reiche ; M. ; et. al.
• 关键词：81.05.Ea ; 81.15.Hi ; 81.10.Aj ; A3. Molecular beam epitaxy ; A3. Quantum wells ; B1. Nitrides ; B2. Piezoelectric materials ; B2. Semiconducting III&ndash ; V materials
• 刊名：Journal of Crystal Growth
• 出版年：2001
• 出版时间：July, 2001
• 年：2001
• 卷：227-228
• 期：Complete
• 页码：437-441
• 全文大小：187 K

文摘

We investigate the growth of wurtzite GaN along the non-polar [1100] direction on γ-LiAlO₂(100) by plasma-assisted molecular beam epitaxy. The morphological and structural properties of buffer layers and their orientation-relationship to the substrate are examined by means of reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction and Raman scattering. The layers are shown to be single-phase GaN(1100) within the measurements’ sensitivity. In contrast to the ubiquitous C-plane GaN[0001] orientation, M-plane wurtzite nitrides are expected to be free of electrical polarization along the growth direction. This is experimentally verified by the absence of internal electrostatic fields in (Al,Ga)N/GaN quantum wells as evidenced by continuous-wave and time-resolved luminescence.