Improvement of via dishing and non-uniformity in TSV chemical mechanical planarization
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- 作者：Can Rao raoc13@mails.tsinghua.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Tongqing Wang wtq@tsinghua.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Jie Wang jie-wang11@mails.tsinghua.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Yuhong Liu ; liuyuhong@tsinghua.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Xinchun Lu ; xclu@tsinghua.edu.cn" class="auth_mail" title="E-mail the corresponding author
- 关键词：Through-silicon via ; Chemical mechanical planarization ; Via dishing ; Non-uniformity
- 刊名：Microelectronic Engineering
- 出版年：2016
- 出版时间：5 February 2016
- 年：2016
- 卷：151
- 期：Complete
- 页码：38-46
- 全文大小：2106 K
文摘
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The synergistic effect of mechanical and chemical factors on the CMP performance of TSV was investigated.
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Down force and polishing time should be strictly controlled to guarantee high removal rate and low dishing.
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A sufficiently high H2O2 concentration is required to prevent via protrusion by modifying the selectivity of Cu/Ti/TEOS.
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Material removal models were established to elucidate the mechanism of via dishing/protrusion formation.