Highly thermally conductive POSS-g-SiCp/UHMWPE composites with excellent dielectric properties and thermal stabilities

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• 作者：Junwei Gu ; ^{gjw@nwpu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Yongqiang Guo ; Zhaoyuan Lv ; Wangchang Geng ; Qiuyu Zhang ; ^{qyzhang1803@gmail.com" class="auth_mail" title="E-mail the corresponding author}
• 关键词：A. Polymer-matrix composites (PMCs) ; B. Thermal properties ; D. Mechanical testing ; E. Compression moulding
• 刊名：Composites Part A: Applied Science and Manufacturing
• 出版年：2015
• 出版时间：November 2015
• 年：2015
• 卷：78
• 期：Complete
• 页码：95-101
• 全文大小：1717 K

文摘

Polyhedral oligomeric silsesquioxane grafting thermally conductive silicon carbide particle (POSS-g-SiCp) fillers, are performed to fabricate highly thermally conductive ultra high molecular weight polyethylene (UHMWPE) composites combining with optimal dielectric properties and excellent thermal stabilities, via mechanical ball milling followed by hot-pressing method. The POSS-g-SiCp/UHMWPE composite with 40 wt% POSS-g-SiCp exhibits relative higher thermal conductivity, lower dielectric constant and more excellent thermal stability, the corresponding thermally conductive coefficient of 1.135 W/mK, the dielectric constant of 3.22, and the 5 wt% thermal weight loss temperature of 423 °C, which holds potential for packaging and thermal management in microelectronic devices. Agari’s semi-empirical model fitting reveals POSS-g-SiCp fillers have strong ability to form continuous thermally conductive networks.