Sandwich double gate vertical tunneling field-effect transistor
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- 作者：Ying Wanga ; wangying7711@yahoo.com" class="auth_mail" title="E-mail the corresponding author ; Wen-hao Zhangb ; Cheng-hao Yua ; Fei Caoa
- 关键词：High-k dielectric material ; Double gate (DG) ; Vertical tunnel field effect transistor (VTFET)
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：May 2016
- 年：2016
- 卷：93
- 期：Complete
- 页码：138-143
- 全文大小：1538 K
文摘
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Sandwich double–gate vertical tunnel field effect transistor (SDG-VTFET) is proposed.
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SDG-VTFET offers a high ION of 672 μA/μm and high ION/IOFF (∼1012).
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It offers an average subthreshold swing of 37 mV/decade.
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Spacer between source region and drain region decreases OFF-state current.