Large cross-section rib silicon-on-insulator (SOI) S-bend waveguide

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• 作者：Nurdiani Zamhari^a ; ^c ; ^{znurdiani@feng.unimas.my} ; ^{znurdiani@gmail.com} ; Abang Annuar Ehsan^b ; ^{aaehsan@ukm.edu.my}
• 关键词：Silicon-on-insulator ; Large cross-section S-bend rib waveguide ; Asymmetrical dimension ; S-bend offset ; Lateral offset
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：130
• 期：Complete
• 页码：1414-1420
• 全文大小：1006 K
• 卷排序：130

文摘

S-bend SOI waveguide is known as the most critical part for SOI device design. Normalized output power for the different parameter of the S-bend waveguide has been analyzed using OptiBPM simulator in 1.55 μm communication wavelength. Dimension of 5 × 5 μm2 single-mode rib waveguide is chosen. The variable parameters are transition offset and lateral offset, given the waveguide length of 100 μm–5000 μm. The maximum normalized output power achieved at the waveguide length of 550 μm for the 10 μm S-bend offset is 95.81%. Moreover, the ideal lateral offset is 2.7 μm with 2.52% normalized output power improvement.