High nitrogen composition-induced low interfacial roughness of GaAs_0.978N_0.022/GaAs multiple quantum wells grown through solid-source molecular beam epitaxy

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• 作者：Mahitosh Biswas^a ; Binita Tongbram^a ; Nilesh Shinde^c ; Roshan Lal Makkar^b ; Anuj Bhatnagar^b ; Subhananda Chakrabarti^c ; ^{subho@ee.iitb.ac.in}
• 关键词：A. Multiple quantum wells ; B. Epitaxial growth ; C. Raman spectroscopy ; D. Crystal structure ; E. Surface properties
• 刊名：Materials Research Bulletin
• 出版年：2017
• 出版时间：April 2017
• 年：2017
• 卷：88
• 期：Complete
• 页码：242-247
• 全文大小：1680 K
• 卷排序：88

文摘

Five-period GaAsN/GaAs multiple quantum wells grown by varying nitrogen pressure. Low interface roughness because of nitrogen’s occupancy at arsenic lattice sites. A relatively sharp interface-induced high intensity in photoluminescence spectra. 100-fold improvement in optical properties after rapid thermal annealing at 700 °C.