A modified scheme to tune the Schottky Barrier Height of NiSi by means of dopant segregation technique

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• 作者：Jian Deng ; Qingbo Liu ; Chao Zhao ; Junfeng Li ; Wenwu Wang ; Dapeng Chen ; Tianchun Ye ; Jun Luo
• 关键词：NiSi ; Schottky diode ; Schottky Barrier Height ; Dopant segregation
• 刊名：Vacuum
• 出版年：2014
• 出版时间：January, 2014
• 年：2014
• 卷：99
• 期：Complete
• 页码：225-227
• 全文大小：716 K

文摘

A modified scheme to tune the Schottky Barrier Height (SBH) of NiSi effectively by means of dopant segregation (DS) technique is presented. This scheme consists of the following steps: (1) The deposited Ni films undergo a rapid thermal anneal (RTA1) at 300?¡ãC/60?s to form Ni-rich silicide followed by removal of un-reacted Ni; (2) implant boron (B) or arsenic (As) into pre-formed Ni-rich silicide and RTA2 at 450-700?¡ãC/30?s to transform Ni-rich silicide to NiSi and to induce DS at NiSi/Si interface as well. The SBHs to electrons (?_bn) or to holes (?_bp) of NiSi tuned using this scheme by B or As DS is ¡Ý1.0?eV, corresponding to ?_bp or ?_bn ¡Ü0.1?eV, comparable to those tuned using conventional scheme by DS, in which B or As ions are implanted into NiSi followed by drive-in anneals to induce DS at NiSi/Si interface.