A new Yb-doped oxyorthosilicate laser crystal: Yb:Gd₂SiO₅

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• 作者：Chengfeng Yan ; Guangjun Zhao ; Lianhan Zhang ; Jun Xu ; Xiaoying Liang ; Du Juan ; Wenxue Li ; Haifeng Pan ; Liangen Ding and Heping Zeng
• 关键词：A. Yb ; Gd₂SiO₅ ; B. Czochralski method ; C. Crystal structure ; D. Absorption spectra ; D. Fluorescence spectra ; D. Laser
• 刊名：Solid State Communications
• 出版年：2006
• 出版时间：February 2006
• 年：2006
• 卷：137
• 期：8
• 页码：451-455
• 全文大小：133 K

文摘

A new Yb-doped oxyorthosilicate laser crystal, Yb:Gd₂SiO₅ (Yb:GSO), has been grown by the Czochralski (Cz) method. The crystal structure was determined by means of X-ray diffraction analysis. Room temperature absorption and fluorescence spectra of Yb³⁺ ions in GSO crystal were measured. Then, spectroscopic parameters of Yb:GSO were calculated and compared with those of another Yb-doped oxyorthosilicate crystal Yb:YSO. Results indicated that Yb:GSO crystal seemed to be a very promising laser gain media in generating ultra-pulses and tunable solid state laser applications. As expected, the output power of 2.72 W at 1089 nm was achieved in Yb:GSO crystal with absorbed power of only 4.22 W at 976 nm, corresponding to the slope efficiency of 71.2 % through the preliminary laser experiment.