Relaxed germanium films on silicon (110)

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• 作者：Tobias F. Wietler ; Eberhard Bugiel ; Karl R. Hofmann
• 关键词：Germanium ; Silicon ; Molecular beam epitaxy (MBE) ; Growth mechanism
• 刊名：Thin Solid Films
• 出版年：2008
• 出版时间：3 November 2008
• 年：2008
• 卷：517
• 期：1
• 页码：272-274
• 全文大小：189 K

文摘

Direct growth of relaxed Ge layers on Si(110) substrates with low defect densities was achieved by surfactant-mediated epitaxy (SME) with Sb as a surfactant. Deposition of Ge at a substrate temperature of 670 °C resulted in complete relaxation of the lattice mismatch. A residual 0.18 % tensile strain was found caused by the thermal mismatch between Ge and Si. No stacking faults were detected in the films. This is ascribed to an abrupt strain release during the initial micro-rough growth phase similar to the one observed in SME on Si(100) and Si(111).