Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35×106 cm2/V s in AlGaAs/GaAs quantum wells grown by MBE
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- 作者：Geoffrey C. Gardnera ; b ; Saeed Fallahia ; John D. Watsona ; Michael J. Manfraa ; b ; c ; mmanfra@purdue.edu" class="auth_mail" title="E-mail the corresponding author
- 关键词：A1. Electron mobility ; A3. Molecular beam epitaxy (MBE) ; A3. Quantum wells ; Gallium arsenide ; Two dimensional electron gas (2DEG)
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：1 May 2016
- 年：2016
- 卷：441
- 期：Complete
- 页码：71-77
- 全文大小：1629 K
文摘
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Gallium purity currently limits mobility <40×106 cm2/V s in 2DEGs grown by MBE.
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Gallium purity is enhanced by high temperature outgassing in an operating MBE.
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2DEG low temperature mobility in excess of 35×106 cm2/V s at density 3.0x1011/cm2.
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2DEG low temperature mobility in excess of 18×106 cm2/V s at density 1.1x1011/cm2.
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We describe strategies to overcome purity limitations.