Study on the microstructure and dielectric properties of X9R ceramics based on BaTiO₃

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• 作者：Shunqi Gao ; Shunhua Wu ; Yonggang Zhang ; Hongxing Yang ; Xinru Wang
• 关键词：BaTiO₃ ceramics ; X9R ; Pb(Sn ; Ti)O₃ dopant ; Microstructure ; Dielectric properties
• 刊名：Materials Science and Engineering: B
• 出版年：2011
• 出版时间：15 January 2011
• 年：2011
• 卷：176
• 期：1
• 页码：68-71
• 全文大小：734 K

文摘

This paper investigated the microstructure and dielectric properties of BaTiO₃-Pb(Sn, Ti)O₃ system ceramics. The Curie point of BaTiO₃ is 130 °C. When the temperature is higher than 130 °C, the dielectric constant of BaTiO₃ drops severely according to Curie–Weiss law. Pb(Ti, Sn)O₃(PTS) was selected to compensate the dielectric constant doping of BaTiO₃ since it has high Curie temperature (Tc) point that is about 296 °C. The Curie temperature (Tc) point of BaTiO₃ was broadened and shifted to higher temperature because of the doping of PTS, so the temperature coefficient of capacitance (TCC) curves of the ceramics based on BaTiO₃ was flattened. When 2 wt % Pb(Ti_0.55Sn_0.45)O₃ was added, the sample showed super dielectric properties that the dielectric constant was >1750 at 25 °C, dielectric loss was lower than 2.0 % and TCC was <±10 % from −55 °C to 200 °C. Therefore the materials satisfied EIA X9R specifications.