The relation between photoluminescence properties and gas pressure with [0001] InGaN single quantum well systems
详细信息 查看全文
- 作者：Toshiaki Tsutsumia ; Giovanni Alfierib ; Yoichi Kawakamib ; 1 ; Ruggero Michelettoa ; ruggero@yokohama-cu.ac.jp" class="auth_mail" title="E-mail the corresponding author
- 关键词：Science ; Publication ; Complicated
- 刊名：Applied Surface Science
- 出版年：2017
- 出版时间：15 January 2017
- 年：2017
- 卷：392
- 期：Complete
- 页码：256-259
- 全文大小：1102 K
文摘
- •
Photoluminescence of InGaN device is variable, there is no clear explanation for this.
- •
We perform an ad-hoc absorption procedure, found that gases on the surface reduce emission.
- •
We found that variability is related to the pressure of the gas in which the sample is immersed.
- •
We point out the role of oxygen as major player in the reduction of photoluminescence.
- •
A model is proposed and explains successfully the dynamical optical processes observed.