Study of novel junctionless Ge n-Tunneling Field-Effect Transistors with lightly doped drain (LDD) region

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• 作者：Xiangyu Liu ; Huiyong Hu ; ^{18595580989@163.com} ; Bin Wang ; Meng Wang ; Genquan Han ; Shimin Cui ; Heming Zhang
• 关键词：Junctionless Ge n-TFET ; LDD region ; GIDL ; Sloped gate oxide structure
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：102
• 期：Complete
• 页码：7-16
• 全文大小：3444 K
• 卷排序：102

文摘

A novel junctionless Ge n-Tunneling Field-Effect Transistors (TFET) structure is proposed. The junctionless device structure enhances Ion effective and Ion = 5.5×10−5A/μm is achieved. A comparison of Ion and Ioff with different channel doping concentration ND and LDD doping concentration NLDD is studied. To reduce the gate induced drain leakage (GIDL) current, the impact of the slope gate oxide structure is also studied. By employing the slope gate oxide structure, the below 60 mV/decade subthreshold swing S = 46.2 mV/decade is achieved.