Oxyg
en and oxyg
en-related c
enters in cast multicrystalline silicon (mc-Si) have be
en investigated. The conc
entration profile and the map of oxyg
en in mc-Si revealed that oxyg
en with higher conc
entration occurred at the bottom area and at the edge area of mc-Si ingots. The oxyg
en conc
entration and its profile were partly dep
end
ent on the cooling progress. It was found that the thermal donors related to oxyg
en were g
enerated in the area of higher oxyg
en conc
entration. The conc
entration of thermal donors can reach to 1×10
14/cm
3. Meanwhile, as-grown oxyg
en precipitates were observed at the bottom of mc-Si.
Publisher: | Elsevier Science |
Language of Publication: | English |
Item Identifier: | S0927-0248(99)00133-6 |
Publication Type: | Article |
ISSN: | 0927-0248 |
Cited by: | - Chen, Gang,""Engineering thermophysical properties of micro- and nanostructures1""International Journal of Thermal Sciences2001pp. 693-701
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| Footnotes: Invited Plenary lecture, Congres francais de thermique SFT2001; 29-31 May 2001, Nantes, France.
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