文摘
This paper reviews the development of bulk SiC single crystals grown by physical vapor transport method, including the polytype control, defects and doped consideration. In addition, defects in commercial 6H-SiC wafer, such as micropipes, hexagonal voids and subgrain boundaries, are examined by transmission optical microscopy, X-ray synchrotron topography in back-reflection geometry and high-resolution X-ray diffraction methods.