Diffusion interaction between magnesium and zinc in 650 nm laser diodes wafer
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- 作者：Deying Ma ; Wei Xia ; Shuqiang Li ; Xiangang Xu ; Xin Zhang ; Zhongxiang Ren
- 关键词：Diffusion ; Laser epitaxy ; Semiconducting III– ; V materials ; Laser diodes
- 刊名：Physica B
- 出版年：2009
- 出版时间：1 May 2009
- 年：2009
- 卷：404
- 期：8-11
- 页码：1598-1601
- 全文大小：161 K
文摘
Zinc (Zn) diffusion in magnesium (Mg) doped AlGaInP based semiconductor laser diode epitaxial wafers has been investigated. After Zn diffusion, the hole concentration in the cladding was about one-fifth of previous value. In addition, Mg in AlInP layer was completely substituted by Zn and has moved towards the surface. Based on secondary ion mass spectrometric analysis, the interaction mechanism of Zn and Mg atoms was proposed.