Tunneling behavior of bismuth telluride nanoplates in electrical transport

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• 作者：Mustafa Eginligil ; Weiqing Zhang ; Alan Kalitsov ; Xianmao Lu ; Hyunsoo Yang
• 刊名：Chemical Physics Letters
• 出版年：2012
• 出版时间：12 September, 2012
• 年：2012
• 卷：546
• 期：Complete
• 页码：125-128
• 全文大小：727 K

文摘

We study the electrical transport properties of ensembles of bismuth telluride (Bi₂Te₃) nanoplates grown by solution based chemical synthesis. Devices consisting of Bi₂Te₃ nanoplates are fabricated by surface treatment after dropping the solution on the structured gold plates and the temperature dependence of resistance shows a nonmetallic behavior. Symmetric tunneling behavior in I-V was observed in both our experimental results and theoretical calculation of surface conductance based on a simple Hamiltonian, which excludes carrier-carrier interactions. Here, we present two devices: one showing symmetric, the other showing a two-step tunneling behavior. The latter can be understood in terms of disorder.